? 2004 ixys all rights reserved v ces = 1700 v i c25 = 26 a v ce(sat) = 5.2 v t fi(typ) = 50 ns ixgr 32n170ah1 g = gate, c = collector, e = emitter features z electrically isolated tab z high current handling capability z mos gate turn-on - drive simplicity z rugged npt structure z molding epoxies meet ul 94 v-0 flammability classification applications z capacitor discharge & pulser circuits z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies ds99233(11/04) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv ces i c = 1ma, v ge = 0 v 1700 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces 500 a v ge = 0 v note 1 t j = 125 c8ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 4.2 5.2 v t j = 125 c 4.8 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c26a i c90 t c = 90 c17a i f90 14 a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 5 ? i cm = 70 a (rbsoa) clamped inductive load @ 0.8 v ces t sc t j = 125 c, v ce = 1200 v; v ge = 15 v, r g = 10 ? 10 s p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c f c mounting force with clamp 22...130/5...30 n/lb v isol 50/60 hz, 1 minute 2500 ~v maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight 5g high voltage igbt with diode advance technical information electrically isolated tab isolated tab e g c isoplus247 (ixgr) e153432
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs i c = i c25 ; v ce = 10 v 25 33 s note 2 c ies 3700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 180 pf c res 44 pf q g 155 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 30 nc q gc 51 nc t d(on) 46 ns t ri 57 ns t d(off) 270 500 ns t fi 50 100 ns e off 1.5 3.0 mj t d(on) 48 ns t ri 42 ns e on 2.5 mj t d(off) 300 ns t fi 70 ns e off 2.4 mj r thjc 0.65 k/w r thck 0.15 k/w inductive load, t j = 125 c i c = i c90 , v ge = 15 v r g = 2.7 ?, v ce = 0.8 v ces note 3 inductive load, t j = 25 c i c = i c90 , v ge = 15 v r g = 2.7 ?, v ce = 0.8 v ces note 3 ixgr 32n170ah1 notes: 1. device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. pulse test, t 300 s, duty cycle 2 % 3. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g . 4. see dh60-18a and ixgh32n170a datasheets for additional characteristics isoplus247 outline reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 20a, v ge = 0 v, note 2 2.7 v i rm i f = 50a, v ge = 0 v, -di f /dt = 800 a/ s50a t rr v r = 600 v 150 n s r thjc 1.5 k/w see ixgx32n170ah1 for charcteristic curves
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